Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser

We present a mode−locked GaSb−based optically pumped semiconductor disk laser operating at 2 µm based on the self−mode−locked mechanism. Using delay differential equation model, we discuss influence of cavity length stability self−mode−locking and design Z−shaped long for self−mode−locking. Employing an aperture F−P etalon in ~365 mm, obtain stable center wavelength 2034.5 nm, with pulse duration 255.48 ps average output power 173 mW repetition rate 404 MHz.